Invention Grant
- Patent Title: Substrate processing apparatus and method of manufacturing semiconductor device
-
Application No.: US16352119Application Date: 2019-03-13
-
Publication No.: US10541170B2Publication Date: 2020-01-21
- Inventor: Takashi Yahata , Naofumi Ohashi , Shun Matsui
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2018-047206 20180314
- Main IPC: H01L21/687
- IPC: H01L21/687 ; C23C16/40 ; C23C16/455 ; C23C16/44 ; H01L21/02 ; H01J37/32
Abstract:
There is provided a technique, including: a process chamber in which a substrate is processed; a substrate support member configured to support the substrate; an elevator configured to elevate the substrate support member; a gas supply port configured to supply a gas to the substrate; and a controller configured to control an elevating operation of the elevator so as to differentiate an interval between the gas supply port and the substrate supported by the substrate support member, when a gas is supplied from the gas supply port.
Public/Granted literature
- US20190287843A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-09-19
Information query
IPC分类:
