Invention Grant
- Patent Title: Method and device for evaluating quality of thin film layer
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Application No.: US15635990Application Date: 2017-06-28
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Publication No.: US10541178B2Publication Date: 2020-01-21
- Inventor: Xianyu Wenxu , Yongyoung Park , Kideok Bae , Wooyoung Yang , Changseung Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2017-0002062 20170105
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L51/00 ; H01L51/52 ; H01L21/67

Abstract:
A method of evaluating the quality of a thin film layer may include: forming the thin film layer on a substrate; applying a stress to the thin film layer; and evaluating the quality of the thin film layer. A device for evaluating the quality of the thin film layer may include a stress chamber for applying a stress to the thin film layer and a refractive index measuring unit for evaluating the quality of the thin film layer based on a rate of change of a refractive index.
Public/Granted literature
- US20180190909A1 METHOD AND DEVICE FOR EVALUATING QUALITY OF THIN FILM LAYER Public/Granted day:2018-07-05
Information query
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