Invention Grant
- Patent Title: Method of inspecting semiconductor substrate and method of manufacturing semiconductor device
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Application No.: US15887186Application Date: 2018-02-02
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Publication No.: US10541182B2Publication Date: 2020-01-21
- Inventor: Yeon-tae Kim , Do-hyung Kim , Kwang-hyun Yang , Chang-yun Lee , Young-uk Choi , Kee-soo Park , Eun-sok Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2017-0126349 20170928
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G01N21/88 ; H01L21/66 ; H01L21/687 ; G01B11/24 ; G01B11/06 ; G01N21/55 ; H01L21/67
Abstract:
A method of inspecting a semiconductor substrate includes measuring light intensity of light reflected on the rotating semiconductor substrate, analyzing a frequency distribution of the measured light intensity, and determining a state of the semiconductor substrate by using the frequency distribution. The analyzing of the frequency distribution of the measured light intensity includes extracting a plurality of frequency components corresponding respectively to a plurality of frequencies from the measured light intensity.
Public/Granted literature
- US20190096773A1 METHOD OF INSPECTING SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-03-28
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