- Patent Title: Optical emission spectroscopic techniques for monitoring etching
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Application No.: US15646845Application Date: 2017-07-11
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Publication No.: US10541184B2Publication Date: 2020-01-21
- Inventor: Soonwook Jung , Soonam Park , Dmitry Lubomirsky
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/66 ; H01L21/67 ; G01N21/31 ; G01N21/67
Abstract:
Embodiments may include a method of etching. The method may also include flowing a gas mixture through a plasma discharge to form plasma effluents. The method may further include flowing the plasma effluents through a plurality of apertures to a layer on a substrate. The layer may have a first thickness. In addition, the method may include etching the layer with the plasma effluents. The method may also include measuring the intensity of emission from a reaction of plasma effluents with the layer. The method may further include summing the intensity of the emission while the plasma effluents are being flowed to the layer to obtain an integrated intensity. The method may then include comparing the integrated intensity to a reference value corresponding to a target etch thickness. The method may include extinguishing the plasma discharge when the integrated intensity is equal to or greater than the reference value.
Public/Granted literature
- US20190019734A1 OPTICAL EMISSION SPECTROSCOPIC TECHNIQUES FOR MONITORING ETCHING Public/Granted day:2019-01-17
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