Invention Grant
- Patent Title: Semiconductor devices with bump allocation
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Application No.: US15399271Application Date: 2017-01-05
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Publication No.: US10541185B2Publication Date: 2020-01-21
- Inventor: Yung-Hsin Kuo
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/00 ; G01R31/28 ; H01L23/48 ; H01L23/488 ; H01L23/50 ; G06F17/50 ; H01L25/00

Abstract:
A semiconductor device includes a substrate and a bump pattern of a plurality of bumps on the substrate. The bump pattern includes a plurality of rows and a plurality of columns. Bumps of the plurality of bumps include one or more radio frequency (RF) signal bumps for transmission of RF signals during operation or probing of the semiconductor device. Each RF signal bump of the one or more RF signal bumps is surrounded by at least three neighboring bumps immediately adjacent the RF signal bump. Each neighboring bump is selected from the group consisting of (i) a ground bump configured to receive a ground voltage during the operation or probing of the semiconductor device, and (ii) another RF signal bump which defines, together with said RF signal bump, a pair of differential signal bumps for transmission of differential RF signals during the operation or probing of the semiconductor device.
Public/Granted literature
- US20170117199A1 SEMICONDUCTOR DEVICES WITH BUMP ALLOCATION Public/Granted day:2017-04-27
Information query
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