- Patent Title: Elbow contact for field-effect transistor and manufacture thereof
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Application No.: US15816913Application Date: 2017-11-17
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Publication No.: US10541191B2Publication Date: 2020-01-21
- Inventor: Guy Cohen , Christian Lavoie , Ahmet Serkan Ozcan , Paul Solomon
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L21/02 ; H01L21/48
Abstract:
A field-effect transistor (FET) and method of manufacture thereof include a gate, a doped semiconductor structure formed on top of the planar source and drain regions, and a sheath of conducting materials flanking the formed doped semiconductor structure, where the sheath is perpendicular to a surface of the planar source and drain regions.
Public/Granted literature
- US20190157187A1 ELBOW CONTACT FOR FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF Public/Granted day:2019-05-23
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