Invention Grant
- Patent Title: Backside redistribution layer (RDL) structure
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Application No.: US15935426Application Date: 2018-03-26
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Publication No.: US10541213B2Publication Date: 2020-01-21
- Inventor: Po-Hao Tsai , Jing-Cheng Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L25/10
- IPC: H01L25/10 ; H01L23/31 ; H01L23/00 ; H01L25/00 ; H01L23/538 ; H01L21/48 ; H01L21/56 ; H01L23/498

Abstract:
An embodiment package on package (PoP) device includes a molding compound having a metal via embedded therein, a passivation layer disposed over the molding compound, the passivation layer including a passivation layer recess vertically aligned with the metal via, and a redistribution layer bond pad capping the metal via, a portion of the redistribution layer bond pad within the passivation layer recess projecting above a top surface of the molding compound.
Public/Granted literature
- US20180218985A1 Backside Redistribution Layer (RDL) Structure Public/Granted day:2018-08-02
Information query
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