Invention Grant
- Patent Title: Redistribution layer structure and fabrication method therefor
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Application No.: US15399956Application Date: 2017-01-06
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Publication No.: US10541218B2Publication Date: 2020-01-21
- Inventor: Anhao Cheng , Chun-Chang Liu , Sheng-Wei Yeh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/00 ; H01L21/02

Abstract:
A method of manufacturing a semiconductor device includes depositing a first passivation layer over a substrate, depositing a conductive material over the first passivation layer, patterning the conductive material to form a redistribution layer (RDL) structure, and depositing a second passivation layer configured to change a shape of a top portion of the RDL structure.
Public/Granted literature
- US20180151525A1 REDISTRIBUTION LAYER STRUCTURE AND FABRICATION METHOD THEREFOR Public/Granted day:2018-05-31
Information query
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