Invention Grant
- Patent Title: Steep-switch vertical field effect transistor
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Application No.: US15729758Application Date: 2017-10-11
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Publication No.: US10541272B2Publication Date: 2020-01-21
- Inventor: Daniel Chanemougame , Julien Frougier , Nicolas J. Loubet , Ruilong Xie
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Joseph Petrokaitis
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L27/24 ; H01L29/10 ; H01L29/66 ; H01L29/08 ; H01L45/00 ; H01L29/78

Abstract:
Embodiments of the invention are directed to a method and resulting structures for a steep-switch vertical field effect transistor (SS-VFET). In a non-limiting embodiment of the invention, a semiconductor fin is formed vertically extending from a bottom source or drain region of a substrate. A top source or drain region is formed on a surface of the semiconductor fin and a top metallization layer is formed on the top source or drain region. A bi-stable resistive system is formed on the top metallization layer. The bi-stable resistive system includes an insulator-to-metal transition material or a threshold-switching selector. The SS-VFET provides a subthreshold switching slope of less than 60 millivolts per decade.
Public/Granted literature
- US20190109177A1 STEEP-SWITCH VERTICAL FIELD EFFECT TRANSISTOR Public/Granted day:2019-04-11
Information query
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