Invention Grant
- Patent Title: Semiconductor structure having integrated inductor therein
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Application No.: US16205065Application Date: 2018-11-29
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Publication No.: US10541297B2Publication Date: 2020-01-21
- Inventor: Ming-Che Lee , I-Nan Chen , Sheng-Chau Chen , Cheng-Hsien Chou , Cheng-Yuan Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L49/02 ; H01L23/31 ; H01L27/01 ; H01L23/00 ; H01L23/522

Abstract:
A semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; and a magnetic core in the second passivation layer; wherein the magnetic core includes a first magnetic material layer and a second magnetic material layer over the first magnetic material layer, the first magnetic material layer and the second magnetic material layer are separated by a high resistance isolation layer, and the high resistance isolation layer has a resistivity greater than about 1.3 ohm-cm.
Public/Granted literature
- US20190109185A1 SEMICONDUCTOR STRUCTURE HAVING INTEGRATED INDUCTOR THEREIN Public/Granted day:2019-04-11
Information query
IPC分类: