A method of producing a semiconductor device includes providing a semiconductor body including a semiconductor body material having a dopant diffusion coefficient that is smaller than the corresponding dopant diffusion coefficient of silicon. At least one first semiconductor region doped with dopants of a first conductivity type is produced in the semiconductor body, including by applying a first implantation of first implantation ions. At least one second semiconductor region adjacent to the at least one first semiconductor region and doped with dopants of a second conductivity type complementary to the first conductivity type is produced in the semiconductor body, including by applying a second implantation of second implantation ions.