A semiconductor device includes a trench structure extending into a semiconductor body from a first surface. The trench structure has a shield electrode, a dielectric structure and a diode structure. The diode structure is arranged at least partly between the first surface and a first part of the dielectric structure. The shield electrode is arranged between the first part of the dielectric structure and a bottom of the trench structure. The shield electrode and the semiconductor body are electrically isolated by the dielectric structure. Corresponding methods of manufacture are also described.