Invention Grant
- Patent Title: Semiconductor device capable of high-voltage operation
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Application No.: US16225077Application Date: 2018-12-19
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Publication No.: US10541328B2Publication Date: 2020-01-21
- Inventor: Cheng-Hua Lin , Yan-Liang Ji , Chih-Wen Hsiung
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/78 ; H01L29/40 ; H01L27/06 ; H01L49/02 ; H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor substrate having a first conductivity type, a first well region formed in a portion of the semiconductor substrate, having a second conductivity type that is the opposite of the first conductivity type. A second well region is formed in a portion of the first well region, having the first conductivity type. A first gate structure is formed over a portion of the second well region and a portion of the first well region. A first doped region is formed in a portion of the second well region. A second doped region is formed in a portion of the first well region, having the second conductivity type. A second dielectric layer is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.
Public/Granted literature
- US20190131450A1 SEMICONDUCTOR DEVICE CAPABLE OF HIGH-VOLTAGE OPERATION Public/Granted day:2019-05-02
Information query
IPC分类:
