The subject matter disclosed herein relates to silicon carbide (SiC) power devices and, more specifically, to SiC super-junction (SJ) power devices. A SiC-SJ device includes a plurality of SiC semiconductor layers of a first conductivity-type, wherein a first and a second SiC semiconductor layer of the plurality of SiC semiconductor layers comprise a termination region disposed adjacent to an active region with an interface formed therebetween, an act wherein the termination region of the first and the second SiC semiconductor layers comprises a plurality of implanted regions of a second conductivity-type, and wherein an effective doping profile of the termination region of the first SiC semiconductor layer is different from an effective doping profile of the termination region of the second SiC semiconductor layer.