Invention Grant
- Patent Title: Method of producing high purity SiOx nanoparticles with excellent volatility and apparatus for producing the same
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Application No.: US13960288Application Date: 2013-08-06
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Publication No.: US10541407B2Publication Date: 2020-01-21
- Inventor: Bo-Yun Jang , Jin-Seok Lee , Joon-Soo Kim
- Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
- Applicant Address: KR Daejeon
- Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
- Current Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
- Current Assignee Address: KR Daejeon
- Agency: Hauptman Ham, LLP
- Priority: KR10-2011-0030414 20110401
- Main IPC: H01M4/04
- IPC: H01M4/04 ; H01M4/48

Abstract:
The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas.
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