Invention Grant
- Patent Title: Nonvolatile memory device, data storage device including the same and operating method thereof
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Application No.: US15958912Application Date: 2018-04-20
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Publication No.: US10546618B2Publication Date: 2020-01-28
- Inventor: Do Hyun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2017-0120623 20170919
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C16/26 ; G11C16/08 ; G06F12/02
Abstract:
A nonvolatile memory device includes a plurality of memory cells; a buffer suitable for storing data to be written in a page of memory cells; a fail bit counter suitable for counting fail bits among the data stored in the buffer; and a state determination unit suitable for determining a reliability of the page, based on a counted number of fail bits.
Public/Granted literature
- US20190088293A1 NONVOLATILE MEMORY DEVICE, DATA STORAGE DEVICE INCLUDING THE SAME AND OPERATING METHOD THEREOF Public/Granted day:2019-03-21
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