Invention Grant
- Patent Title: Electrostatic discharge circuit
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Application No.: US15663948Application Date: 2017-07-31
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Publication No.: US10546619B2Publication Date: 2020-01-28
- Inventor: Chih-Wei Lai , Yun-Jen Ting , Hsin-Kun Hsu
- Applicant: eMemory Technology Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: EMEMORY TECHNOLOGY INC.
- Current Assignee: EMEMORY TECHNOLOGY INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: WPAT, PC
- Main IPC: H02H9/04
- IPC: H02H9/04 ; G11C7/22 ; G11C7/12 ; G06F7/00 ; G06F21/73 ; G11C7/06 ; G11C7/24 ; G11C17/16 ; G11C17/18 ; H04L9/08 ; H01L27/06 ; H01L27/112 ; G11C16/34 ; G11C29/44 ; G11C16/08 ; G11C16/24 ; G11C16/26 ; G11C16/32 ; G11C11/56 ; G11C16/04 ; G11C16/06 ; G11C16/10 ; G11C16/14

Abstract:
An ESD circuit is connected with a pad. The ESD circuit includes a voltage divider, a RC circuit and a path control circuit. The voltage divider is connected between the pad and a first node and provides plural divided voltages. The RC circuit is connected between the pad and the first node. The RC circuit receives the plural divided voltages and provides a control circuit. The path control circuit is connected with the pad and the first node. The path control circuit receives the plural divided voltages and the control voltage. When the pad receives a first ESD zap, the RC circuit controls the path control circuit to turn on a first ESD current path. Consequently, an ESD current flows from the pad to the first node through the first ESD current path.
Public/Granted literature
- US20180316185A1 ELECTROSTATIC DISCHARGE CIRCUIT Public/Granted day:2018-11-01
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