Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US15902317Application Date: 2018-02-22
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Publication No.: US10546803B2Publication Date: 2020-01-28
- Inventor: Tomonori Katano
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP2017-088819 20170427
- Main IPC: H01L23/492
- IPC: H01L23/492 ; H01L21/52 ; H01L23/00 ; H01L23/053

Abstract:
A semiconductor device includes an insulating circuit-substrate on which a semiconductor chip is mounted, a casing accommodating the insulating circuit-substrate, and a plate-shaped terminal-connecting member having both ends suspended so that the terminal-connecting member extends between two opposite side-walls of the casing, the terminal-connecting member having a connection-terminal and load-absorbing portions, the connection-terminal being provided in a central region between the both ends so as to be connected to the semiconductor chip, the load-absorbing portions being provided between fixing points to the casing and the central region, the rigidity of the load-absorbing portions in a longitudinal direction being equal to or less than 50% of the rigidity of the central region so that the load-absorbing portions absorb load applied from the two side-walls and are deformed.
Public/Granted literature
- US20180315683A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2018-11-01
Information query
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