Invention Grant
- Patent Title: Method for fabricating bit line contact
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Application No.: US16053505Application Date: 2018-08-02
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Publication No.: US10546863B1Publication Date: 2020-01-28
- Inventor: Naoyoshi Kobayashi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/768 ; H01L21/02 ; H01L21/3213 ; H01L21/3205 ; H01L23/532 ; H01L23/528

Abstract:
Disclosed herein is a method that includes: forming a composite layer, the composite layer comprising first and second insulative materials and a first polysilicon layer that is between the first and second insulative materials, forming a hole in the composite layer, the hole penetrating through the composite layer to define respective edge portions of the first and second insulative materials and the first polysilicon layer, and converting the edge portion of the first polysilicon layer into third insulative material so that the third insulative material is between the respective edges of the first and second insulative materials.
Information query
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