Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16169826Application Date: 2018-10-24
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Publication No.: US10546935B2Publication Date: 2020-01-28
- Inventor: Fumio Yamada
- Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Applicant Address: JP Kanagawa
- Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee Address: JP Kanagawa
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2017-205093 20171024
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/423 ; H01L29/778 ; H01L29/20 ; H01L29/51 ; H01L29/78 ; H01L29/812

Abstract:
A semiconductor device implementing a field plate is disclosed. The semiconductor device includes electrodes of a source, a gate, and a drain; an insulating film covering at least the drain electrode; a field plate that includes a first part overlapping with the gate electrode and a second part not overlapping with the gate electrode; and a source interconnect connected with the source electrode. A feature of the semiconductor device of the invention is that both of the first part and the second part are electrically connected with the source interconnection.
Public/Granted literature
- US20190123152A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-25
Information query
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