Invention Grant
- Patent Title: Plasma excitation for spatial atomic layer deposition (ALD) reactors
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Application No.: US14846697Application Date: 2015-09-04
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Publication No.: US10550469B2Publication Date: 2020-02-04
- Inventor: Karl F. Leeser
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Penilla IP, APC
- Main IPC: C23C16/455
- IPC: C23C16/455 ; H01J37/32 ; C23C16/458 ; C23C16/52 ; C23C16/509 ; C23C14/56 ; C23C16/56 ; C23C16/44 ; H01L21/67

Abstract:
A spatial atomic layer deposition (ALD) system is disclosed. The system includes a chamber that includes a plurality of zones oriented along a track. Also included is a shuttle that is configured to support the substrate and transport the substrate to each of the plurality of zones to enable deposition of a thin film. The shuttle includes an RF power electrode and an RF ground electrode coupled to an RF power source. The RF electrode and the RF ground electrode are each embedded in the shuttle, such that power provided by the RF power source to the shuttle moves with the shuttle to each of the zones. The RF power source is configured to be activated in synchronization with moving the shuttle to one of the zones.
Public/Granted literature
- US20170067156A1 Plasma Excitation for Spatial Atomic Layer Deposition (ALD) Reactors Public/Granted day:2017-03-09
Information query
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