Invention Grant
- Patent Title: Recovery for non-volatile memory after power loss
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Application No.: US15477169Application Date: 2017-04-03
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Publication No.: US10552311B2Publication Date: 2020-02-04
- Inventor: Joseph Douglas Edgington , Hisham Chowdhury
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02 ; G06F3/06 ; G06F12/1009 ; G11C16/10
Abstract:
Non-volatile memory array can be recovered after a power loss. In one example, pages of a memory array are scanned to find a first free page after the power loss. The first free page is marked as available, and the page marked as available is written to with the next write cycle.
Public/Granted literature
- US20170206157A1 RECOVERY FOR NON-VOLATILE MEMORY AFTER POWER LOSS Public/Granted day:2017-07-20
Information query
