A semiconductor memory device includes a memory cell array, a first data latch that retains a write unit of data to be written to the memory cell array, a first address latch that retains a write address indicating a write target destination for the write unit of data in the first data latch, a second data latch that retains fail data that is a write unit of data that has failed to be written to the memory cell array, and a second address latch that retains a fail address indicating a write target destination for the fail data. A controller is configured to output the fail address from the second address latch in response to a first output command requesting output of the fail address and to output the fail data from the second data latch in response to a second output command requesting an output of the fail data.