According to one embodiment, a semiconductor storage device includes a first plane having a first plurality of memory cells, a second plane having a second plurality of memory cells, first bit lines which are connected to the first plane, second bit lines which are connected to the second plane, a plurality of first sense amplifiers which charge the plurality of first bit lines, and a plurality of second sense amplifiers which charge the plurality of second bit lines. When the first and second planes operate in parallel, a total sum of currents supplied to the plurality of first bit lines from the plurality of first sense amplifiers and currents supplied to the plurality of second bit lines from the plurality of second sense amplifiers reaches a first current value, then decreases to a second current value, and then increases to a third current value.