- Patent Title: Dynamic reference current sensing using multiple reference cells
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Application No.: US16022688Application Date: 2018-06-29
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Publication No.: US10553288B2Publication Date: 2020-02-04
- Inventor: Tien-Chun Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G11C16/28
- IPC: G11C16/28 ; H03K5/24 ; G11C7/06 ; G11C11/16 ; G11C7/00 ; G11C7/14 ; G11C11/56 ; G11C16/34 ; G11C29/02 ; G11C16/30 ; G11C5/02

Abstract:
A circuit includes a memory cell that generates a cell current having a cell current value, a first reference cell that generates a first current having a first current value, and a second reference cell that generates a second current having a second current value. A current generating circuit generates a reference current having a reference current value based on the first current value and the second current value, and a sense amplifier sums, at a comparison node, a third current having the cell current value and a fourth current having the reference current value. A buffer outputs a voltage on the comparison node as an output of the sense amplifier.
Public/Granted literature
- US20180308553A1 DYNAMIC REFERENCE CURRENT SENSING Public/Granted day:2018-10-25
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