Invention Grant
- Patent Title: Ion collector for use in plasma systems
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Application No.: US14850623Application Date: 2015-09-10
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Publication No.: US10553411B2Publication Date: 2020-02-04
- Inventor: Otto Chen , Chi-Ying Wu , Chiah-Chih Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.
Public/Granted literature
- US20170076920A1 ION COLLECTOR FOR USE IN PLASMA SYSTEMS Public/Granted day:2017-03-16
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