Invention Grant
- Patent Title: Substrate processing apparatus, substrate processing method and storage medium
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Application No.: US15149734Application Date: 2016-05-09
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Publication No.: US10553421B2Publication Date: 2020-02-04
- Inventor: Seiki Ishida , Shogo Fukui , Hidetaka Shinohara
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: JP2015-100082 20150515; JP2015-223311 20151113
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; H01L21/687

Abstract:
Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a first nozzle that ejects droplets of a chemical liquid toward a front surface of a substrate, the droplets being formed by mixing a gas supplied by a gas supply mechanism and a heated chemical liquid supplied by a heated chemical liquid supply mechanism with each other, and a second nozzle that ejects the heated deionized water supplied by the heated deionized water supply mechanism toward the rear surface of the substrate. The first nozzle supplies the droplets to the front surface of the substrate heated from the rear surface thereof by the heated deionized water supplied from the second nozzle.
Public/Granted literature
- US20160336170A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM Public/Granted day:2016-11-17
Information query
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