Invention Grant
- Patent Title: Reflection mode photomask and fabrication method therefore
-
Application No.: US15682849Application Date: 2017-08-22
-
Publication No.: US10553428B2Publication Date: 2020-02-04
- Inventor: Chun-Lang Chen , Chih-Chiang Tu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/46 ; H01L21/033 ; H01L21/027
Abstract:
A method of fabricating a mask blank includes depositing a reflective multilayer over a substrate, depositing a capping layer over the reflective multilayer, depositing an absorber layer over the capping layer, and depositing an anti-reflective coating (ARC) layer over the absorber layer. The ARC layer is a single material film.
Public/Granted literature
- US20190067007A1 REFLECTION MODE PHOTOMASK AND FABRICATION METHOD THEREFORE Public/Granted day:2019-02-28
Information query
