Invention Grant
- Patent Title: Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography
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Application No.: US16050685Application Date: 2018-07-31
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Publication No.: US10553432B2Publication Date: 2020-02-04
- Inventor: Martin Glodde , Dario L. Goldfarb
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/027 ; G03F7/075 ; G03F7/16

Abstract:
An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.
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