Invention Grant
- Patent Title: Method of manufacturing semiconductor device using photoresist as ion implantation mask
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Application No.: US15883393Application Date: 2018-01-30
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Publication No.: US10553436B2Publication Date: 2020-02-04
- Inventor: Naoko Kodama
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: Rabin & Berdo, P.C.
- Priority: JP2017-051240 20170316
- Main IPC: H01L21/266
- IPC: H01L21/266 ; H01L29/66 ; H01L21/027 ; H01L21/04 ; H01L29/08 ; H01L29/739 ; H01L29/32 ; H01L29/861 ; H01L29/06 ; H01L29/40 ; H01L21/265
Abstract:
A method of manufacturing a semiconductor device, including providing a semiconductor wafer, forming a photoresist film on a main surface of the semiconductor wafer, forming a first mask pattern and a second mask pattern on the photoresist film, selectively removing portions of the photoresist film according to the first and second mask patterns, to respectively form a first opening and a second opening in the photoresist film, a position of the second opening differing from that of the first opening, and performing ion implantation of an impurity into the semiconductor wafer, using the photoresist film having the first and second openings formed therein as a mask.
Public/Granted literature
- US20180269063A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2018-09-20
Information query
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