Invention Grant
- Patent Title: Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure
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Application No.: US15819092Application Date: 2017-11-21
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Publication No.: US10553439B2Publication Date: 2020-02-04
- Inventor: Aritra Dasgupta , Oleg Gluschenkov
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Alvin Borromeo; Andrew M. Calderon
- Main IPC: H01L21/268
- IPC: H01L21/268 ; H01L21/28 ; H01L29/51
Abstract:
Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.
Public/Granted literature
- US20180090328A1 MULTIPLE NANOSECOND LASER PULSE ANNEAL PROCESSES AND RESULTANT SEMICONDUCTOR STRUCTURE Public/Granted day:2018-03-29
Information query
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