Invention Grant
- Patent Title: Pattern formation method
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Application No.: US15703127Application Date: 2017-09-13
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Publication No.: US10553443B2Publication Date: 2020-02-04
- Inventor: Tomoaki Sawabe , Shinobu Sugimura , Koji Asakawa
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2016-223082 20161116
- Main IPC: B81C1/00
- IPC: B81C1/00 ; G03F7/00 ; H01L21/027 ; H01L21/033 ; H01L21/308 ; H01L51/00

Abstract:
According to one embodiment, a pattern formation method includes forming a structure body on a first surface of a patterning member, the structure body having protrusions and a recess. The protrusions are arranged at a first pitch along a first direction. The first direction is aligned with the first surface. The recess is between the protrusions. The method further includes forming a resin film of a block copolymer on the structure body. The block copolymer includes first portions and second portions. The first and second portions are arranged alternately at a second pitch along the first direction. The structure body includes first and second regions. The first portions are on the first regions. The second portions on the second regions. The method further includes removing the second portions and the second regions, introducing a metal to the first regions, and etching the patterning member using the first regions.
Public/Granted literature
- US20180138048A1 PATTERN FORMATION METHOD Public/Granted day:2018-05-17
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