Invention Grant
- Patent Title: Techniques for processing a polycrystalline layer using an angled ion beam
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Application No.: US15339517Application Date: 2016-10-31
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Publication No.: US10553448B2Publication Date: 2020-02-04
- Inventor: Tristan Y. Ma , Morgan Evans , Kevin Anglin , Robert J. Masci , John Hautala
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- Current Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/321 ; B24B37/20 ; C23F4/00 ; H01J37/32
Abstract:
A method of processing a layer. The method may include providing the layer on a substrate, the substrate defining a substrate plane; directing an ion beam to an exposed surface of the layer in an ion exposure when the substrate is disposed in a first rotational position, the ion beam having a first ion trajectory, the first ion trajectory extending along a first direction, wherein the first ion trajectory forms a non-zero angle of incidence with respect to a perpendicular to the substrate plane; performing a rotation by rotating the substrate with respect to the ion beam about the perpendicular from the first rotational position to a second rotational position; and directing the ion beam to the exposed surface of the layer in an additional ion exposure along the first ion trajectory when the substrate is disposed in the second rotational position.
Public/Granted literature
- US20180122650A1 TECHNIQUES FOR PROCESSING A POLYCRYSTALLINE LAYER USING AN ANGLED ION BEAM Public/Granted day:2018-05-03
Information query
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