Methods of forming a silicon layer, methods of forming patterns, and methods of manufacturing semiconductor devices using the same

Invention Grant

US10553449B2 Methods of forming a silicon layer, methods of forming patterns, and methods of manufacturing semiconductor devices using the same 有权

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Patent Title: Methods of forming a silicon layer, methods of forming patterns, and methods of manufacturing semiconductor devices using the same
Application No.: US15700491

Application Date: 2017-09-11
Publication No.: US10553449B2

Publication Date: 2020-02-04
Inventor: Sun-Hye Hwang , Youn-Joung Cho , Won-Woong Chung , Nam-Gun Kim , Kong-Soo Lee , Badro Im , Yoon-Chul Cho
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Applicant Address: KR Suwon-si, Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Suwon-si, Gyeonggi-do
Agency: Lee & Morse, P.C.
Priority: KR10-2016-0131908 20161012
Main IPC: H01L21/3213
IPC: H01L21/3213 ; H01L21/311

Methods of forming a silicon layer, methods of forming patterns, and methods of manufacturing semiconductor devices using the same

Abstract:

A method of forming a pattern includes forming an etch target layer on a substrate, forming sacrificial patterns on the etch target layer, the sacrificial patterns including a carbon-containing material, providing a silicon-sulfur compound or a sulfur-containing gas onto the sacrificial patterns to form a seed layer, providing a silicon precursor onto the seed layer to form silicon-containing mask patterns, and at least partially etching the etch target layer using the mask patterns.

Public/Granted literature

US20180102260A1 METHODS OF FORMING A SILICON LAYER, METHODS OF FORMING PATTERNS, AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME Public/Granted day:2018-04-12

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）
H01L21/321	.......后处理
H01L21/3213	........对该层进行物理的或化学的腐蚀，例如由预沉积的外延层产生一个形成图形的层