Invention Grant
- Patent Title: Semiconductor device with contact pad and fabrication method therefore
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Application No.: US15701654Application Date: 2017-09-12
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Publication No.: US10553479B2Publication Date: 2020-02-04
- Inventor: Chun-Hsu Yen , Chen-Hui Yang , Yu Chuan Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/00 ; H01L23/532
Abstract:
A method of fabricating a semiconductor structure includes forming a conductive structure over a first passivation layer, depositing a first dielectric film continuously over the conductive structure, depositing a second dielectric film continuously over the first dielectric film, and depositing a third dielectric film over the second dielectric film. A portion of the third dielectric film is in contact with a portion of the first dielectric film.
Public/Granted literature
- US20180233466A1 SEMICONDUCTOR DEVICE WITH CONTACT PAD AND FABRICATION METHOD THEREFORE Public/Granted day:2018-08-16
Information query
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