A method of fabricating a semiconductor interconnect structure by providing a semiconductor structure with a dielectric layer with and an embedded electrically conductive structure. A dielectric capping layer and a metal capping layer separating a second dielectric layer located above the first dielectric layer. The segment of metal capping layer covers at least a portion of a top surface of the first electrically conductive structure. Exposing parts of both the first electrically conductive structure and the dielectric capping layer by forming an opening in the second dielectric layer and the metal capping layer. Forming a second electrically conductive structure in the opening, such that (i) the second electrically conductive structure is located over part of the dielectric capping layer, and (ii) the second electrically conductive structure is in electrical contact with the first electrically conductive structure.