Invention Grant
- Patent Title: Complementary metal-oxide-semiconductor field-effect transistor and method thereof
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Application No.: US15836399Application Date: 2017-12-08
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Publication No.: US10553496B2Publication Date: 2020-02-04
- Inventor: Deyuan Xiao
- Applicant: Zing Semiconductor Corporation
- Applicant Address: CN Shanghai
- Assignee: Zing Semiconductor Corporation
- Current Assignee: Zing Semiconductor Corporation
- Current Assignee Address: CN Shanghai
- Agency: Huffman Law Group, PC
- Priority: CN201510671009 20151015
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/423 ; H01L29/786 ; H01L29/49 ; H01L21/02

Abstract:
A complementary metal-oxide-semiconductor field-effect transistor comprises a semiconductor substrate, N-type and P-type field-effect transistors positioned in the semiconductor substrate. Each of the field-effect transistors includes a germanium nanowire, a III-V compound layer surrounding the germanium nanowire, a potential barrier layer mounted on the III-V compound layer, a gate dielectric layer, a gate, a source region and a drain region mounted on two sides of the gate. The field-effect transistor can produce two-dimensional electron gases and two-dimensional electron hole gases, and enhance the carrier mobility of the complementary metal-oxide-semiconductor field-effect transistor.
Public/Granted literature
- US20180114728A1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR AND METHOD THEREOF Public/Granted day:2018-04-26
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