- Patent Title: Assessment method, and semiconductor device manufacturing method
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Application No.: US16537529Application Date: 2019-08-10
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Publication No.: US10553505B2Publication Date: 2020-02-04
- Inventor: Yasushi Niimura , Hideki Shishido , Takayuki Shimatou , Toshihiro Arai
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2016-022696 20160209; JP2016-082863 20160418
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L29/06 ; H01L29/78 ; H01L25/00 ; G01R31/26

Abstract:
To easily assess a feedback capacitance of a semiconductor element. An assessment method of assessing a feedback capacitance of a semiconductor element is provided, the assessment method including: acquiring a first characteristic correlated with the feedback capacitance and a second characteristic correlated with the feedback capacitance; and assessing the feedback capacitance based on the first characteristic and the second characteristic. The first characteristic may be a characteristic that corresponds to a withstanding voltage of the semiconductor element, and the second characteristic may be an on-resistance of the semiconductor element. In the assessing, the feedback capacitance may be assessed based on a ratio between the first characteristic and the second characteristic.
Public/Granted literature
- US20190363027A1 ASSESSMENT METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2019-11-28
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