Invention Grant
- Patent Title: Heat dissipation substrate and method for producing same
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Application No.: US14398555Application Date: 2013-05-07
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Publication No.: US10553518B2Publication Date: 2020-02-04
- Inventor: Shoji Akiyama , Yoshihiro Kubota , Makoto Kawai
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2012-106758 20120508
- International Application: PCT/JP2013/062840 WO 20130507
- International Announcement: WO2013/168707 WO 20131114
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/12 ; H01L23/373 ; H01L21/18 ; H01L29/16 ; H01L29/20

Abstract:
The present invention relates to a heat dissipation substrate, which is a composite substrate composed of two layers, and which is characterized in that a surface layer (first layer) (1) is configured of single crystal silicon and a handle substrate (second layer) (2) is configured of a material that has a higher thermal conductivity than the first layer. A heat dissipation substrate of the present invention has high heat dissipation properties.
Public/Granted literature
- US20150108502A1 HEAT DISSIPATION SUBSTRATE AND METHOD FOR PRODUCING SAME Public/Granted day:2015-04-23
Information query
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