Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US14752884Application Date: 2015-06-27
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Publication No.: US10553525B2Publication Date: 2020-02-04
- Inventor: Tomoya Kashiwazaki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn I.P. Law Group, PLLC.
- Priority: JP2014-133849 20140630
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L23/31

Abstract:
A semiconductor device has a semiconductor chip, a signal lead that is arranged in a periphery of the semiconductor chip and has a main surface and a rear surface opposed to the main surface, a wire that electrically connects the semiconductor chip and the main surface of the signal lead, and a sealing body made of sealing resin that seals the semiconductor chip, the signal lead and the wire. The signal lead has, in an extending direction of the signal lead, one end located inside the sealing body, the other end located outside the sealing body, and a wire connection region which is the main surface of the signal lead and to which the wire is connected, and an inner groove is provided in the main surface of the signal lead between the one end and the wire connection region.
Public/Granted literature
- US20150380342A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2015-12-31
Information query
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