A method for fabricating a semiconductor device including an electrically programmable fuse includes patterning dielectric material formed on a first electrode including a first conductive material to create one or more openings, and forming second conductive material within the one or more openings. Forming the second conductive material includes forming one or more voids encapsulated by the second conductive material such that the one or more voids have boundaries defined in part by portions of the second conductive material disposed between the one or more voids and the dielectric material. The portions of the second conductive material correspond to fuse links.