Embodiments of methods and systems for adjusting wafer deformation during wafer bonding are provided. The method comprises: releasing inner rings of a first wafer, and applying a first gas pressure to the inner rings of the first wafer, such that the inner rings of the first wafer are in contact with a second wafer; releasing middle rings of the first wafer, such that the middle rings of the first wafer are deformed under a second gas pressure and in contact with the second wafer; releasing inner rings of the second wafer, and applying a third gas pressure less than the first gas pressure to the inner rings of the second wafer; releasing middle rings of the second wafer; and releasing outer rings of the first wafer and releasing outer rings of the second wafer simultaneously.