Invention Grant
- Patent Title: Method for filling patterns
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Application No.: US15891312Application Date: 2018-02-07
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Publication No.: US10553576B2Publication Date: 2020-02-04
- Inventor: Ching-Wen Hung , Chih-Sen Huang , Yi-Wei Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201510392020 20150707
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/088 ; H01L21/8234 ; H01L27/092
Abstract:
A method for filling patterns includes the steps of: providing a substrate having a cell region defined thereon; forming main patterns on the substrate and within the cell region; and filling first dummy patterns adjacent to the main patterns. Preferably, each of the first dummy patterns comprises a first length along X-direction between 2 μm to 5 μm and a second length along Y-direction between 3 μm to 5 μm.
Public/Granted literature
- US20180166434A1 METHOD FOR FILLING PATTERNS Public/Granted day:2018-06-14
Information query
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