Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16059562Application Date: 2018-08-09
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Publication No.: US10553585B2Publication Date: 2020-02-04
- Inventor: Dae Seong Lee , Min Su Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0049271 20160422
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H03K19/20 ; H01L23/528 ; H03K19/0948 ; H03K3/356 ; H03K3/3562 ; H01L27/02 ; H01L29/78 ; H01L21/8238

Abstract:
A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.
Public/Granted literature
- US20180350815A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-12-06
Information query
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