- Patent Title: Thyristor volatile random access memory and methods of manufacture
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Application No.: US16015164Application Date: 2018-06-21
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Publication No.: US10553588B2Publication Date: 2020-02-04
- Inventor: Harry Luan , Bruce L. Bateman , Valery Axelrad , Charlie Cheng
- Applicant: TC Lab, Inc.
- Applicant Address: US CA Gilroy
- Assignee: TC Lab, Inc.
- Current Assignee: TC Lab, Inc.
- Current Assignee Address: US CA Gilroy
- Agency: Aka Chan LLP
- Main IPC: G11C19/08
- IPC: G11C19/08 ; H01L27/102 ; H01L29/749 ; H01L29/66 ; H01L29/10 ; H01L29/16 ; H01L29/06 ; H01L21/762 ; H01L21/324 ; H01L29/45 ; H01L49/02 ; G11C11/39 ; H01L21/28 ; H01L21/321 ; H01L29/423 ; H01L29/08
Abstract:
Memory cells are formed with vertical thyristors to create a volatile memory array. Power consumption in such arrays is reduced or controlled with various techniques including encoding the data stored in the arrays.
Public/Granted literature
- US20180301455A1 Thyristor Volatile Random Access Memory and Methods of Manufacture Public/Granted day:2018-10-18
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