Invention Grant
- Patent Title: Memory cell and an array of memory cells
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Application No.: US16007054Application Date: 2018-06-13
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Publication No.: US10553595B2Publication Date: 2020-02-04
- Inventor: Durai Vishak Nirmal Ramaswamy , Wayne Kinney , Marco Domenico Tiburzi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: G11C11/21
- IPC: G11C11/21 ; H01L27/11507 ; H01L27/11514 ; G11C11/24

Abstract:
A memory cell includes a first electrode and a second electrode. A select device and a programmable device are in series with each other between the first and second electrodes. The select device is proximate and electrically coupled to the first electrode. The programmable device is proximate and electrically coupled to the second electrode. The programmable device includes a radially inner electrode having radially outer sidewalls. Ferroelectric material is radially outward of the outer sidewalls of the inner electrode. A radially outer electrode is radially outward of the ferroelectric material. One of the outer electrode or the inner electrode is electrically coupled to the select device. The other of the outer electrode and the inner electrode is electrically coupled to the second electrode. Arrays of memory cells are disclosed.
Public/Granted literature
- US20180294271A1 Memory Cell And An Array Of Memory Cells Public/Granted day:2018-10-11
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