Invention Grant
- Patent Title: Semiconductor device having conductive feature overlapping an edge of an active region
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Application No.: US14051724Application Date: 2013-10-11
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Publication No.: US10553687B2Publication Date: 2020-02-04
- Inventor: Po-Yu Chen , Wan-Hua Huang , Jing-Ying Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/66

Abstract:
A semiconductor device includes a substrate having an active region, a drain region in the active region, a source region in the active region, a gate structure, and a conductive field plate. The gate structure extends in a first direction over the active region. The gate structure is arranged between the drain region and the source region in a second direction transverse to the first direction. The conductive field plate extends in the second direction over an edge of the active region.
Public/Granted literature
- US20150102427A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING Public/Granted day:2015-04-16
Information query
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