Invention Grant
- Patent Title: Semiconductor device having buried gate structure, method for manufacturing the same, and memory cell having the same
-
Application No.: US15208395Application Date: 2016-07-12
-
Publication No.: US10553692B2Publication Date: 2020-02-04
- Inventor: Dong-Soo Kim , Sung-Won Lim , Eun-Jeong Kim , Hyun-Jin Chang , Keun Heo , Jee-Hyun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2015-0185152 20151223
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L27/108 ; H01L29/10 ; H01L29/49 ; H01L29/51 ; H01L27/22 ; H01L27/24 ; H01L29/78
Abstract:
A semiconductor device includes at least one trench extending into a semiconductor substrate and lined with a gate dielectric layer; a dipole inducing layer covering a lowermost portion of the lined trench; a gate electrode covering the dipole inducing layer and filled in the lined trench; and doping regions, in the semiconductor substrate, separated from each other by the lined trench and separated from the dipole inducing layer.
Public/Granted literature
Information query
IPC分类:
