Invention Grant
- Patent Title: Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
-
Application No.: US16385193Application Date: 2019-04-16
-
Publication No.: US10553697B1Publication Date: 2020-02-04
- Inventor: Andrew Armstrong , Albert G. Baca , Andrew A. Allerman , Carlos Anthony Sanchez , Erica Ann Douglas , Robert Kaplar
- Applicant: National Technology & Engineering Solutions of Sandia, LLC
- Applicant Address: US NM Albuquerque
- Assignee: National Technology & Engineering Solutions of Sandia, LLC
- Current Assignee: National Technology & Engineering Solutions of Sandia, LLC
- Current Assignee Address: US NM Albuquerque
- Agent Martin I. Finston
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/778 ; H01L21/306 ; H01L21/74 ; H01L21/205 ; H01L21/18 ; H01L21/203
Abstract:
Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.
Information query
IPC分类:
