Invention Grant
- Patent Title: Heterojunction bipolar transistor
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Application No.: US15875700Application Date: 2018-01-19
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Publication No.: US10553709B2Publication Date: 2020-02-04
- Inventor: Jui-Pin Chiu , Shu-Hsiao Tsai , Rong-Hao Syu , Cheng-Kuo Lin
- Applicant: WIN Semiconductor Corp.
- Applicant Address: TW Taoyuan
- Assignee: WIN SEMICONDUCTORS CORP.
- Current Assignee: WIN SEMICONDUCTORS CORP.
- Current Assignee Address: TW Taoyuan
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW103124409A 20140716; CN201410344152 20140718
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/417
Abstract:
A heterojunction bipolar transistor, comprising an elongated base mesa, an elongated base electrode, two elongated emitters, an elongated collector, and two elongated collector electrodes. The elongated base electrode is formed on the base mesa along the long axis of the base mesa, and the base electrode has a base via hole at or near the center of the base electrode. The two elongated emitter are formed on the base mesa respectively at two opposite sides of the base electrode, and each of two emitters has an elongated emitter electrode formed on the emitter. The elongated collector is formed below the base mesa. The two elongated collector electrodes are formed on the collector respectively at two opposite sides of the base mesa.
Public/Granted literature
- US20180145159A1 HETEROJUNCTION BIPOLAR TRANSISTOR Public/Granted day:2018-05-24
Information query
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